**** 03/11/03 18:49:20 ******** PSpice 9.2.2 (May 2001) ******* ID# 1111111111 ** Profile: "SCHEMATIC1-sim1" [ C:\work\cnam\sim-schematic1-sim1.sim ] **** CIRCUIT DESCRIPTION ****************************************************************************** ** Creating circuit file "sim-schematic1-sim1.sim.cir" ** WARNING: THIS AUTOMATICALLY GENERATED FILE MAY BE OVERWRITTEN BY SUBSEQUENT SIMULATIONS *Libraries: * Local Libraries : .INC ".\reference\models.mod" * From [PSPICE NETLIST] section of g:\PSpice\PSpice.ini file: **** INCLUDING models.mod **** .SUBCKT RPOLY1 N1 N2 PARAMS: W=1e-6 L=1e-6 * ---------------------------------------------------------------------- ************************* SIMULATION PARAMETERS ************************ * ---------------------------------------------------------------------- * format : PSPICE * model : RESISTOR * process : * revision : * extracted : * doc# : * ---------------------------------------------------------------------- * TYPICAL MEAN CONDITION * ---------------------------------------------------------------------- * VARIABLES: M (mulitiplier) W,L = device width and length [m] R1 N1 N2 {2.300e+01*(L-(0.0))/(W-(-1.00e-08))} TC=9.990e-04 .ENDS RPOLY1 * ---------------------------------------------------------------------- .MODEL VERT15 PNP * ---------------------------------------------------------------------- ************************* SIMULATION PARAMETERS ************************ * ---------------------------------------------------------------------- * format : PSPICE * model : BJT * process : * revision : * extracted : * doc# : * ---------------------------------------------------------------------- * TYPICAL MEAN CONDITION * ---------------------------------------------------------------------- * emitter = 15u x 15u, field oxide (base-emitter), collector = substrate * +IS =1.251e-16 IRB =1.500e-06 +IKF =7.111e-04 BF =2.459e+01 NF =1.000e+00 +ISE =1.000e-19 NE =1.140e+00 VAF =1.767e+02 +IKR =9.130e-04 BR =5.000e-01 NR =1.000e+00 +ISC =1.282e-14 NC =1.000e+00 VAR =1.600e+01 +RBM =1.000e+01 +RB =8.500e+01 +RE =1.000e+01 +RC =7.100e+01 +TF =6.400e-09 + +EG =1.115e+00 XTI =5.362e+00 XTB =2.253e+00 +CJE =1.229e-13 VJE =8.000e-01 MJE =4.515e-01 +CJC =4.488e-14 VJC =5.600e-01 MJC =3.939e-01 + * ---------------------------------------------------------------------- .MODEL MODP PMOS LEVEL=7 * ---------------------------------------------------------------------- ************************* SIMULATION PARAMETERS ************************ * ---------------------------------------------------------------------- * format : PSPICE * model : MOS BSIM3v3 * process : * revision : * extracted : * doc# : * ---------------------------------------------------------------------- * TYPICAL MEAN CONDITION * ---------------------------------------------------------------------- * * *** Flags *** +MOBMOD =1.000e+00 CAPMOD =2.000e+00 +NLEV =0 * *** Threshold voltage related model parameters *** +K1 =5.752e-01 +K2 =-3.60e-02 K3 =8.354e+00 K3B =2.133e-01 +NCH =3.659e+16 VTH0 =-7.44e-01 +VOFF =-9.71e-02 DVT0 =7.075e-01 DVT1 =4.135e-01 +DVT2 =-1.98e-01 KETA =-1.18e-03 +PSCBE1 =1.459e+08 PSCBE2 =2.562e-07 +DVT0W =6.991e+00 DVT1W =6.689e+05 DVT2W =1.091e-01 * *** Mobility related model parameters *** +UA =1.184e-09 UB =2.053e-18 UC =-2.36e-11 +U0 =1.972e+02 * *** Subthreshold related parameters *** +DSUB =5.000e-01 ETA0 =6.488e-02 ETAB =-1.81e-02 +NFACTOR=6.729e-01 * *** Saturation related parameters *** +EM =4.100e+07 PCLM =2.335e+00 +PDIBLC1=1.056e-02 PDIBLC2=2.002e-03 DROUT =5.000e-01 +A0 =6.233e-01 A1 =0.000e+00 A2 =1.000e+00 +PVAG =0.000e+00 VSAT =9.829e+04 AGS =1.540e-01 +B0 =2.667e-07 B1 =0.000e+00 DELTA =1.000e-02 +PDIBLCB=3.714e-01 * *** Geometry modulation related parameters *** +W0 =6.651e-07 DLC =5.486e-08 +DWC =3.844e-07 DWB =0.000e+00 DWG =0.000e+00 +LL =0.000e+00 LW =0.000e+00 LWL =0.000e+00 +LLN =1.000e+00 LWN =1.000e+00 WL =0.000e+00 +WW =0.000e+00 WWL =0.000e+00 WLN =1.000e+00 +WWN =1.000e+00 * *** Temperature effect parameters *** +AT =3.300e+04 UTE =-1.49e+00 +KT1 =-5.34e-01 KT2 =2.200e-02 KT1L =0.000e+00 +UA1 =0.000e+00 UB1 =0.000e+00 UC1 =0.000e+00 +PRT =0.000e+00 * *** Overlap capacitance related and dynamic model parameters *** +CGDO =3.500e-10 CGSO =3.500e-10 CGBO =1.500e-10 +CGDL =0.000e+00 CGSL =0.000e+00 CKAPPA =6.000e-01 +CF =0.000e+00 ELM =5.000e+00 +XPART =1.000e+00 CLC =1.000e-15 CLE =6.000e-01 * *** Parasitic resistance and capacitance related model parameters *** +RDSW =2.979e+03 +CDSC =0.000e+00 CDSCB =1.000e-05 CDSCD =0.000e+00 +PRWB =0.000e+00 PRWG =0.000e+00 CIT =0.000e+00 * *** Process and parameters extraction related model parameters *** +TOX =1.627e-08 NGATE =0.000e+00 +NLX =1.466e-07 * *** Substrate current related model parameters *** +ALPHA0 =0.000e+00 BETA0 =3.000e+01 * *** Noise effect related model parameters *** +AF =1.279e+00 KF =6.314e-29 EF =1.000e+00 +NOIA =1.000e+20 NOIB =5.000e+04 NOIC =-1.40e-12 * *** Common extrinsic model parameters *** +LINT =5.486e-08 WINT =3.844e-07 XJ =3.000e-07 +RSH =4.800e+01 JS =4.000e-05 +CJ =4.900e-04 CJSW =2.100e-10 +MJ =4.700e-01 MJSW =2.900e-01 +PB =8.000e-01 TT =0.000e+00 +PBSW =8.000e-01 * ---------------------------------------------------------------------- .MODEL MODN NMOS LEVEL=7 * ---------------------------------------------------------------------- ************************* SIMULATION PARAMETERS ************************ * ---------------------------------------------------------------------- * format : PSPICE * model : MOS BSIM3v3 * process : * revision : * extracted : * doc# : * ---------------------------------------------------------------------- * TYPICAL MEAN CONDITION * ---------------------------------------------------------------------- * * *** Flags *** +MOBMOD =1.000e+00 CAPMOD =2.000e+00 +NLEV =0 * *** Threshold voltage related model parameters *** +K1 =1.183e+00 +K2 =-1.59e-01 K3 =1.404e-01 K3B =-3.19e-01 +NCH =6.937e+16 VTH0 =8.357e-01 +VOFF =-9.95e-02 DVT0 =3.368e+00 DVT1 =7.995e-01 +DVT2 =-1.72e-01 KETA =-2.55e-02 +PSCBE1 =4.194e+08 PSCBE2 =1.000e-04 +DVT0W =-3.78e-01 DVT1W =2.061e+05 DVT2W =-1.36e-01 * *** Mobility related model parameters *** +UA =1.000e-12 UB =2.199e-18 UC =5.554e-11 +U0 =4.872e+02 * *** Subthreshold related parameters *** +DSUB =5.000e-01 ETA0 =6.982e-03 ETAB =-2.63e-02 +NFACTOR=6.710e-01 * *** Saturation related parameters *** +EM =4.100e+07 PCLM =1.101e+00 +PDIBLC1=4.797e-02 PDIBLC2=9.152e-04 DROUT =5.000e-01 +A0 =8.383e-01 A1 =0.000e+00 A2 =1.000e+00 +PVAG =0.000e+00 VSAT =9.079e+04 AGS =1.583e-01 +B0 =2.356e-07 B1 =0.000e+00 DELTA =1.000e-02 +PDIBLCB=3.040e-01 * *** Geometry modulation related parameters *** +W0 =1.633e-06 DLC =2.090e-07 +DWC =3.853e-07 DWB =0.000e+00 DWG =0.000e+00 +LL =0.000e+00 LW =0.000e+00 LWL =0.000e+00 +LLN =1.000e+00 LWN =1.000e+00 WL =0.000e+00 +WW =0.000e+00 WWL =0.000e+00 WLN =1.000e+00 +WWN =1.000e+00 * *** Temperature effect parameters *** +AT =3.300e+04 UTE =-1.80e+00 +KT1 =-4.11e-01 KT2 =2.200e-02 KT1L =0.000e+00 +UA1 =0.000e+00 UB1 =0.000e+00 UC1 =0.000e+00 +PRT =0.000e+00 * *** Overlap capacitance related and dynamic model parameters *** +CGDO =3.500e-10 CGSO =3.500e-10 CGBO =1.500e-10 +CGDL =0.000e+00 CGSL =0.000e+00 CKAPPA =6.000e-01 +CF =0.000e+00 ELM =5.000e+00 +XPART =1.000e+00 CLC =1.000e-15 CLE =6.000e-01 * *** Parasitic resistance and capacitance related model parameters *** +RDSW =1.776e+03 +CDSC =1.269e-03 CDSCB =3.987e-04 CDSCD =9.439e-05 +PRWB =0.000e+00 PRWG =0.000e+00 CIT =2.566e-05 * *** Process and parameters extraction related model parameters *** +TOX =1.585e-08 NGATE =0.000e+00 +NLX =1.000e-10 * *** Substrate current related model parameters *** +ALPHA0 =0.000e+00 BETA0 =3.000e+01 * *** Noise effect related model parameters *** +AF =1.451e+00 KF =2.330e-26 EF =1.000e+00 +NOIA =1.000e+20 NOIB =5.000e+04 NOIC =-1.40e-12 * *** Common extrinsic model parameters *** +LINT =2.090e-07 WINT =3.853e-07 XJ =3.000e-07 +RSH =2.500e+01 JS =1.000e-05 +CJ =2.900e-04 CJSW =2.300e-10 +MJ =4.600e-01 MJSW =3.300e-01 +PB =8.600e-01 TT =0.000e+00 +PBSW =8.600e-01 * ---------------------------------------------------------------------- **** RESUMING sim-schematic1-sim1.sim.cir **** .lib "E:\Pspice-pro\Fondeur-ams\cmos6tm.mod" .lib "nom.lib" *Analysis directives: .DC LIN V5 0 9 0.1 .PROBE V(*) I(*) W(*) D(*) NOISE(*) .INC ".\sim-SCHEMATIC1.net" **** INCLUDING sim-SCHEMATIC1.net **** * source SIM V_V2_1 N58885 N98915 DC 0Vdc AC 0.001Vac V_V1_Ro N92914 N93915 DC 0Vdc AC 0.001Vac V_Vbias_3 N92543 0 4V V_V1_2 VDD_2 0 9V M_M1_2 VDD_2 VE VS 0 MODN + L=2u + W=20u R_RD_3 N92637 VDD_3 2k R_RD1 N15075 VDD 2k V_Vin N98915 0 3V V_Vin_3 N92914 0 2.5V V_V1_1 VDD 0 6V R_RD3 N59222 VDD 2k V_V6 VE 0 0Vdc R_RS3 0 N59246 0.5k M_M2 N59005 N58885 N59038 0 MODN + L=2u + W=20u V_V1_3 VDD_3 0 9V M_M3 N59222 N58885 N59246 0 MODN + L=2u + W=20u R_RD2 N59005 VDD 2k M_M1 N15075 N58885 0 0 MODN + L=2u + W=20u M_M1_3 N92555 N93915 0 0 MODN + L=2u + W=20u R_RD_2 0 VS 2k M_M2_3 N92637 N92543 N92555 0 MODN + L=2u + W=20u R_RS2 0 N59038 0.1k **** RESUMING sim-schematic1-sim1.sim.cir **** .END ERROR -- DC device V5 is undefined